N-Channel MOSFET, 18 A, 710 V, 3-Pin TO-220FP STF20N65M5
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см. техническую документацию
см. техническую документацию
50 шт., срок 8 недель
4 450 ֏
Кратность заказа 5 шт.
Добавить в корзину 5 шт.
на сумму 22 250 ֏
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Resistance | 190 mΩ |
| Maximum Drain Source Voltage | 710 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Series | MDmesh M5 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 7.5 ns |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 130 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Rds On - Drain-Source Resistance: | 190 mOhms |
| Rise Time: | 7.5 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Current - Continuous Drain (Id) @ 25В°C | 18A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1345pF @ 100V |
| Manufacturer | STMicroelectronics |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 30W(Tc) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
| Standard Package | 50 |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±25V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Вес, г | 1.8 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 858 КБ
Datasheet
pdf, 1171 КБ
STF20N65M5
pdf, 858 КБ
Документация
pdf, 808 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
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