N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STD9N60M2
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2475 шт., срок 8 недель
2 070 ֏
Кратность заказа 5 шт.
5 шт.
на сумму 10 350 ֏
Альтернативные предложения3
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 5.5 A |
| Maximum Drain Source Resistance | 780 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 60 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | MDmesh M2 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Width | 6.2mm |
| Continuous Drain Current (Id) | 5.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 780mΩ@3A, 10V |
| Drain Source Voltage (Vdss) | 600V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 320pF@100V |
| Power Dissipation (Pd) | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 10nC@10V |
| Type | null |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 13.5 ns |
| Id - Continuous Drain Current: | 5.5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 60 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Rds On - Drain-Source Resistance: | 780 mOhms |
| Rise Time: | 7.5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 8.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 13.5 ns |
| Id - Continuous Drain Current | 5.5 A |
| Manufacturer | STMicroelectronics |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 60 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 10 nC |
| Rds On - Drain-Source Resistance | 780 mOhms |
| Rise Time | 7.5 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 8.8 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Вес, г | 0.8 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг
