STD11NM50N, Транзистор полевой MOSFET N-канальный 500В 8.5А 0.4 Ом, 70Вт
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345 шт. с центрального склада, срок 3 недели
930 ֏
Мин. кол-во для заказа 3 шт.
от 12 шт. —
800 ֏
от 24 шт. —
730 ֏
от 48 шт. —
690 ֏
3 шт.
на сумму 2 790 ֏
Альтернативные предложения2
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 500В 8.5А 0.4 Ом, 70Вт
Технические параметры
Корпус | dpak | |
EU RoHS | Compliant with Exemption | |
ECCN (US) | EAR99 | |
Part Status | Active | |
HTS | 8541.29.00.95 | |
Lead Shape | Gull-wing | |
Tab | Tab | |
Package Height | 2.4(Max) | |
Package Width | 6.2(Max) | |
Package Length | 6.6(Max) | |
Mounting | Surface Mount | |
PCB changed | 2 | |
Product Category | Power MOSFET | |
Process Technology | MDmesh II | |
Configuration | Single | |
Channel Mode | Enhancement | |
Channel Type | N | |
Number of Elements per Chip | 1 | |
Maximum Drain Source Voltage (V) | 500 | |
Maximum Gate Source Voltage (V) | ±25 | |
Maximum Continuous Drain Current (A) | 8.5 | |
Maximum Drain Source Resistance (mOhm) | 470@10V | |
Typical Gate Charge @ Vgs (nC) | 19@10V | |
Typical Gate Charge @ 10V (nC) | 19 | |
Typical Input Capacitance @ Vds (pF) | 547@50V | |
Maximum Power Dissipation (mW) | 70000 | |
Typical Fall Time (ns) | 10 | |
Typical Rise Time (ns) | 10 | |
Typical Turn-Off Delay Time (ns) | 33 | |
Typical Turn-On Delay Time (ns) | 8 | |
Minimum Operating Temperature (°C) | -55 | |
Maximum Operating Temperature (°C) | 150 | |
Packaging | Tape and Reel | |
Automotive | No | |
Supplier Package | DPAK | |
Standard Package Name | TO-252 | |
Pin Count | 3 | |
Military | No | |
кол-во в упаковке | 2500 | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
Fall Time: | 10 ns | |
Id - Continuous Drain Current: | 8.5 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package / Case: | TO-252-3 | |
Pd - Power Dissipation: | 70 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 19 nC | |
Rds On - Drain-Source Resistance: | 470 mOhms | |
Rise Time: | 10 ns | |
Series: | STD11NM50N | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | MDmesh | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Type: | Power MOSFET | |
Typical Turn-Off Delay Time: | 33 ns | |
Typical Turn-On Delay Time: | 8 ns | |
Vds - Drain-Source Breakdown Voltage: | 500 V | |
Vgs - Gate-Source Voltage: | -25 V, +25 V | |
Vgs th - Gate-Source Threshold Voltage: | 3 V | |
Brand | STMicroelectronics | |
Factory Pack Quantity | 2500 | |
Fall Time | 10 ns | |
Id - Continuous Drain Current | 8.5 A | |
Manufacturer | STMicroelectronics | |
Maximum Operating Temperature | +150 C | |
Mounting Style | SMD/SMT | |
Number of Channels | 1 Channel | |
Package / Case | TO-252-3 | |
Pd - Power Dissipation | 70 W | |
Qg - Gate Charge | 19 nC | |
Rds On - Drain-Source Resistance | 470 mOhms | |
Rise Time | 10 ns | |
RoHS | Details | |
Series | N-channel MDmesh | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Type | Power Mosfet | |
Typical Turn-Off Delay Time | 33 ns | |
Typical Turn-On Delay Time | 8 ns | |
Unit Weight | 0.139332 oz | |
Vds - Drain-Source Breakdown Voltage | 500 V | |
Vgs - Gate-Source Voltage | +/-25 V | |
Vgs th - Gate-Source Threshold Voltage | 3 V | |
Вес, г | 0.6 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 9 августа1 | бесплатно |
HayPost | 13 августа1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг